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ARCHIVE INFORMATION
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RF Device Data
Freescale Semiconductor
MRF9002NR2
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 20
μAdc)
VGS(th)
2.4
—
4
Vdc
Gate Quiescent Voltage
(VDS
= 26 Vdc, I
D
= 25 mAdc)
VGS(Q)
3
—
5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 0.1 Adc)
VDS(on)
—
0.3
—
Vdc
Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain @ P1dB
(VDD
= 26 Vdc, I
DQ
= 25 mA, f = 960.0 MHz)
Gps
15
18
—
dB
Drain Efficiency @ P1dB
(VDD
= 26 Vdc, I
DQ
= 25 mA, f = 960.0 MHz)
η
35
50
—
%
Input Return Loss @ P1dB
(VDD
= 26 Vdc, I
DQ
= 25 mA, f = 960.0 MHz)
IRL
—
-
-
dB
Power Output, 1 dB Compression Point
(VDD
= 26 Vdc, I
DQ
= 25 mA, f = 960.0 MHz)
P1dB
34
37
—
dBm
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